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savantic semiconductor product specification silicon npn power transistors 2SD905 description with to-3 package high voltage ,high speed applications for high voltage power switching tv horizontal deflection output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1400 v v ceo collector-emitter voltage open base 650 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 10 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -45~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD905 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;r be = : 650 v v (br)ebo emitter-base breakdown voltage i e =10ma ; i c =0 5 v v cesat collector-emitter saturation voltage i c =8a;i b =1.5a 10 v v besat base-emitter saturation voltage i c =8a;i b =1.5a 1.5 v i ces collector cut-off current v ce =1400v ; r be =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 0.5 ma h fe dc current gain i c =1a ; v ce =5v 8 36 t f fall time i c =6.8a; i b1 =1.1a;l b =0 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD905 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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